| dc.contributor.advisor | Franc, Jan | |
| dc.creator | Dědič, Václav | |
| dc.date.accessioned | 2017-04-19T18:01:32Z | |
| dc.date.available | 2017-04-19T18:01:32Z | |
| dc.date.issued | 2009 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11956/22846 | |
| dc.description.abstract | CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdTe. Experimental part of this thesis consits of measurement of slopes of Lux-Ampere characteristics of variously doped CdTe samples depended on voltage and energy of excitation. Gradients of measured guidelines of Lux-Ampere characteristics show strong dependency on an electric charge accumulated on deep levels. This thesis also contains numerical models of photoconductivity for various parameters of material. | en_US |
| dc.language | Čeština | cs_CZ |
| dc.language.iso | cs_CZ | |
| dc.publisher | Univerzita Karlova, Matematicko-fyzikální fakulta | cs_CZ |
| dc.title | Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření | cs_CZ |
| dc.type | diplomová práce | cs_CZ |
| dcterms.created | 2009 | |
| dcterms.dateAccepted | 2009-09-22 | |
| dc.description.department | Institute of Physics of Charles University | en_US |
| dc.description.department | Fyzikální ústav UK | cs_CZ |
| dc.description.faculty | Faculty of Mathematics and Physics | en_US |
| dc.description.faculty | Matematicko-fyzikální fakulta | cs_CZ |
| dc.identifier.repId | 42700 | |
| dc.title.translated | Photoelectric transport in high resistivity CdTe for gamma ray detectors | en_US |
| dc.contributor.referee | Šikula, Josef | |
| dc.identifier.aleph | 001137767 | |
| thesis.degree.name | Mgr. | |
| thesis.degree.level | navazující magisterské | cs_CZ |
| thesis.degree.discipline | Optika a optoelektronika | cs_CZ |
| thesis.degree.discipline | Optics and Optoelectronics | en_US |
| thesis.degree.program | Fyzika | cs_CZ |
| thesis.degree.program | Physics | en_US |
| uk.thesis.type | diplomová práce | cs_CZ |
| uk.taxonomy.organization-cs | Matematicko-fyzikální fakulta::Fyzikální ústav UK | cs_CZ |
| uk.taxonomy.organization-en | Faculty of Mathematics and Physics::Institute of Physics of Charles University | en_US |
| uk.faculty-name.cs | Matematicko-fyzikální fakulta | cs_CZ |
| uk.faculty-name.en | Faculty of Mathematics and Physics | en_US |
| uk.faculty-abbr.cs | MFF | cs_CZ |
| uk.degree-discipline.cs | Optika a optoelektronika | cs_CZ |
| uk.degree-discipline.en | Optics and Optoelectronics | en_US |
| uk.degree-program.cs | Fyzika | cs_CZ |
| uk.degree-program.en | Physics | en_US |
| thesis.grade.cs | Výborně | cs_CZ |
| thesis.grade.en | Excellent | en_US |
| uk.abstract.en | CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdTe. Experimental part of this thesis consits of measurement of slopes of Lux-Ampere characteristics of variously doped CdTe samples depended on voltage and energy of excitation. Gradients of measured guidelines of Lux-Ampere characteristics show strong dependency on an electric charge accumulated on deep levels. This thesis also contains numerical models of photoconductivity for various parameters of material. | en_US |
| uk.file-availability | V | |
| uk.publication.place | Praha | cs_CZ |
| uk.grantor | Univerzita Karlova, Matematicko-fyzikální fakulta, Fyzikální ústav UK | cs_CZ |
| dc.identifier.lisID | 990011377670106986 | |
